RU30120S
N-Channel Advanced Power MOSFET
Features
• 30V/120A,
RDS (ON) =2. 5mΩ(Typ. )@VGS=10V RDS (ON) =3. 3mΩ(Typ. )@VGS=4. 5V
• Super High Dense Cell Design • Ultra Low On-Resistance • 100% Avalanche Tested • Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters
Pin Description
D
G S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
TC=25°C
30 ±20 175 -55 to 175 120
V
°C °C A
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
480 A
120 A
100
150 W
75
1 °C/W
62. 5 °C/W
306 mJ
Ruichips Semiconductor Co. , Ltd Rev. A– DEC. , 2013
1
www. ruichips. com
RU30120S
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU30120S Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
VDS=30V, VGS=0V IDSS Zero Gate Voltage Drain Current
TJ=125°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
④
RDS(ON)
VGS=10V, IDS=60A Drain-Source On-state Resistance
VGS=4. 5V, IDS=48A
30 1 30
123 ±100
2. 5 4 3. 3 6
Diode Characteristics
VSD④ trr
Diode Forward Voltage Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics⑤
ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs
1. 2 45 90
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time
tr Turn-on Rise Time td(OFF) Turn-off Delay Time
tf Turn-off Fall Time Gate Charg...
RU30120S PDF File
