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2SK3159

Renesas
Part Number 2SK3159
Manufacturer Renesas
Description N-Channel MOSFET
Published Apr 3, 2016
Detailed Description 2SK3159 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ. • High speed...
Datasheet PDF File 2SK3159 PDF File

2SK3159
2SK3159

Overview
2SK3159 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 23 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G1084-0400 Rev.
4.
00 May 15, 2006 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
4.
00 May 15, 2006 page 1 of 7 2SK3159 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at...


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