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2SJ555

Renesas
Part Number 2SJ555
Manufacturer Renesas
Description P-Channel MOSFET
Published Apr 3, 2016
Detailed Description 2SJ555 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω...
Datasheet PDF File 2SJ555 PDF File

2SJ555
2SJ555

Overview
2SJ555 Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.
017 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 G D S REJ03G0902-0300 (Previous: ADE-208-634A) Rev.
3.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
3.
00 Sep 07, 2005 page 1 of 7 2SJ555 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle...


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