2W POWER AMPLIFIER - RF Micro Devices
Description
SZM-2066Z 2.
4GHz to 2.
7GHz 2W Power Ampli-
SZM-2066Zfier
2.
4GHz to 2.
7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.
16 and
802.
11b/g equipment in the 2.
4GHz to 2.
7GHz bands.
It can run from a 3V to 5V supply.
The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands.
It features an output power
Optimum Technology detector, on/off power control and high RF overdrive robustMatching® Applied ness.
A 20dB step attenuator feature can be utilized by switch-
GaAs HBT
ing the second stage Power up/down control.
GaAs MESFET
InGaP HBT
Vcc = 5V
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS
RFIN
RFOUT
Si BJT GaN HEMT
Vbias = 5V
Stage 1 Bias
Stage 2 Bias
Stage 3 Bias
InP HBT
RF MEMS LDMOS
Pow er Up/Dow n Control
Pow er Detector
Features
P1dB= 33.
5dBm at 5V Three Stages of Gain:37dB 802.
11g 54Mb/s Class AB Per-
formance POUT=26dBm at 2.
5% EVM, VCC
5V, 690mA Active Bias with Adjustable Cur-
rent On-Chip Output Power Detector Low Thermal Resistance Power Up/Down Control <1s Attenuator Step 20dB at
VPC2 = 0 V
Applications
802.
16 WiMAX Driver or Output Stage
802.
11b/g WiFi, WiFi
Parameter
Specification Min.
Typ.
Frequency of Operation
2500
Output Power at 1dB Compression
32.
0
33.
5
Small Signal Gain
32.
2
33.
7
EVM 2.
5
Third Order Supression
-45.
0
Noise Figure
7.
7
Worst Case Input Return Loss
7.
5 10.
5
Worst Case Output Return Loss
12.
5
15.
5
Output Voltage Range
0.
9 to 1.
8
Quiescent Current
454 583
Power Up Control Current
4.
0
...
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