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UM3202

Unitpower
Part Number UM3202
Manufacturer Unitpower
Description Dual N-Ch 30V Fast Switching MOSFETs
Published Apr 1, 2016
Detailed Description UM3202 Dual N-Ch 30V Fast Switching MOSFETs General Description The UM3202 is the highest performance trench N-ch MOSFE...
Datasheet PDF File UM3202 PDF File

UM3202
UM3202

Overview
UM3202 Dual N-Ch 30V Fast Switching MOSFETs General Description The UM3202 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fnosr most of the synchronous buck converter applications .
The UM3202 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS 30V RDS(ON) 18mΩ ID 7.
3A Applicatio z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Dual SOP8 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±20 7.
3 5.
8 37 72 21 1.
5 -55 to 150 -55 to 150 Units V V A A A mJ A W ℃ ℃ Typ.
----- Max.
85 25 Unit ℃/W ℃/W 1 UM3202 Dual N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (4.
5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance ...


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