Power MOSFET - International Rectifier
Description
VDS RDS(on) max
(@VGS = 4.
5V)
Qg (typical) QSW (typical) QOSS (typical)
ID
(@TA = 25°C)
30 V
25 mΩ
9.
5 nC 3.
4 nC 12 nC
8.
3 A
IRF7807VD1PbF-1
FETKY MOSFET / SCHOTTKY DIODE
SO-8
A/S 1 A/S 2
8 K/D 7 K/D
A/S 3
6 K/D
G4
5 K/D D
Top View
Applications l Co-Pack N-channel HEXFET® POWER MOSFET and Schottky Diode
l Ideal for Synchronous Rectifiers in DC-DC
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number Package Type
IRF7807VD1PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7807VD1PbF-1 IRF7807VD1TRPbF-1
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
25°C
(VGS ≥ 4.
5V)
Pulsed Drain Current
70°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃÃ25°C 70°C
Schottky and Body Diode
fAverage Forward Current
25°C 70°C
Junction & Storage Temperature Range
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient hMaximum Junction-to-Lead
Symbol VDS VGS ID IDM PD
IF (AV)
TJ , TSTG
Symbol RθJA RθJL
Max 30 ±20 8.
3 6.
6 66 2.
5 1.
6 3.
5 2.
2 -55 to 150
Typ Max ––– 50 ––– 20
Units V A
W
°C Units °C/W
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May 19, 2014
IRF7807VD1PbF-1
Electrical Characteristics
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge* Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Symbol Min
BVDSS RDS(on) VGS(th)
30 ––– 1.
0
–––
IDSS ––– –––
IGSS QG QGS1 QGS2 QGD QSW QOSS RG td(on) tr td(off) tf
––– ––– ––– ––– ––– ––...
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