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STP12N50M2

STMicroelectronics
Part Number STP12N50M2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 27, 2016
Detailed Description STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preli...
Datasheet PDF File STP12N50M2 PDF File

STP12N50M2
STP12N50M2


Overview
STP12N50M2 N-channel 500 V, 0.
325 Ω typ.
,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data 7$% 72   Features Order code STP12N50M2 VDS 500 V RDS(on) max ID 0.
38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1.
Internal schematic diagram , TAB Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the w...



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