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2PG006

Panasonic
Part Number 2PG006
Manufacturer Panasonic
Description Silicon N-channel enhancement IGBT
Published Mar 27, 2016
Detailed Description IGBT This product complies with the RoHS Directive (EU 2002/95/EC). PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnc...
Datasheet PDF File 2PG006 PDF File

2PG006
2PG006

Overview
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dce/ 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.
4 V  High-speed switching: tf = 175 ns (typ.
)  Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-emitter voltage (E-B short) VCES 430 V Gate-emitter voltage (E-B sho...


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