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K4174

Part Number	K4174
Manufacturer	Panasonic
Description	Silicon N-channel enhancement MOS FET
Published	Mar 27, 2016
Detailed Description	Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ielt...
Datasheet	K4174 PDF File

Overview

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dce/ Power MOS FETs This product complies with the RoHS Directive (EU 2002/95/EC).
2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits  Features  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ  High-speed switching: tf = 90 ns (typ.
)  Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrend...

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