N-Channel MOSFET - SemiHow
Description
HFW10N60S
May 2010
HFW10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 9.
5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
D2-PAK
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 9.
5 5.
7 38 ρ30 700 9.
5 15.
6 4.
5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) * Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
3.
13 156 1.
25 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W W/ଇ ଇ
ଇ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
----
Max.
0.
8 40 62.
5
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣ͢͡͡
HFW10N60S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
75 A
2.
0 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 Ꮃ ID = 250 ᒺ, Referenced ...
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