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KDV350E

KEC
Part Number KDV350E
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO. FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package. (ESC Package) KDV350E ...
Datasheet PDF File KDV350E PDF File

KDV350E
KDV350E

Overview
SEMICONDUCTOR TECHNICAL DATA VCO.
FEATURES Low Series Resistance : rS=0.
50 (Max.
) Small Package.
(ESC Package) KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CE 1 CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V 2 D 1.
ANODE 2.
CATHODE F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Reverse Current Capacitance VR IR C1V C4V Capacitance Ratio K Series Resistance rS TEST CONDITION IR=1 A VR=15V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz MIN.
15 15.
0 5.
3 2.
8 - TYP.
- MAX.
10 17.
5 6.
3 0.
5 UNIT V nA pF Marking Type Name UK 2014.
3.
31 Revision No : 1 1/2 REVERSE CURRENT I R (A) KDV350E -11 10 IR - VR -12 10 -13 10 0 4 8 12 REVERSE VOLTAGE VR (V) 16 CAPACITANCE C (pF) 25 20 15 10 5 0 -1 10 CR - V f=1MHz 1.
0 REVERSE VOLTAGE VR (V) 10 r s - VR 0.
4 f=1MHz 0.
3 0.
2 0.
1 0 0.
5 1.
0 3.
0 5.
0 10 30 50 REVERSE VOLTAGE VR (V) SERIES RESISTANCE r s (Ω) 2014.
3.
31 Revision No : 1 2/2 ...


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