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KDV350F

KEC
Part Number KDV350F
Manufacturer KEC
Description Silicon Diode
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resis...
Datasheet PDF File KDV350F PDF File

KDV350F
KDV350F


Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V=2.
8 (Min.
) Low Series Resistance.
: rS=0.
5 (max.
) Good C-V linearity.
KDV350F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1.
ANODE 2.
CATHODE DIM A B C D E F MILLIMETERS 1.
00+_ 0.
05 0.
80+0.
10/-0.
05 0.
60+_ 0.
05 0.
30+_ 0.
05 0.
40 MAX 0.
13+_ 0.
05 Marking Type Name TFSC E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance C1V C4V Capacitance Ratio C1V/C4V Series Resistance rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN.
- 15.
5 5.
0 2.
8 - TYP.
- MAX.
10 100 17.
0 6.
0 0.
5 UNIT nA pF - 2004.
7.
14 Revision No : 0 1/2 REVERSE CURRENT IR (A) KDV350F -11 10 IR - VR 10 -12 10 -13 0 4 8 12 REVERSE VOLTAGE VR (V) 16 TOTAL CAPACITANCE CT (pF) 30 25 20 15 10 5 0 0.
1 C T - VR f=1MHz 1.
0 REVERSE VOLTAGE VR (V) 10 0.
5 0.
4 0.
3 0.
2 0.
1 0 0.
1 r s - VR f=470MHz 1.
0 REVERSE VOLTAGE VR (V) 10 ∆(LOG CT) / ∆(LOG VR) ∆(LOG CT) / ∆(LOG VR) - VR 0 -0.
5 -1.
0 -1.
5 0.
1 1.
0 REVERSE VOLTAGE VR (V) 10 SERIES RESISTANCE rs (Ω) 2004.
7.
14 Revision No : 0 2/2 ...


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