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KDV358F

KEC
Part Number KDV358F
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 25, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small ...
Datasheet PDF File KDV358F PDF File

KDV358F
KDV358F

Overview
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.
FEATURES Good C-V Linearity.
Low Series Resistance.
: rS=0.
4 Small Package : TFSC.
(Max.
) KDV358F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1.
ANODE 2.
CATHODE DIM A B C D E F MILLIMETERS 1.
00+_ 0.
05 0.
80+0.
10/-0.
05 0.
60+_ 0.
05 0.
30+_ 0.
05 0.
40 MAX 0.
13+_ 0.
05 Marking Type Name TFSC G ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance C1V C4V Capacitance Ratio C1V/C4V Series Resistance rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN.
- 19.
5 8.
0 2.
2 - TYP.
- MAX.
10 100 21.
0 9.
3 0.
4 UNIT nA pF - 2004.
8.
9 Revision No : 0 1/2 REVERSE CURRENT IR (A) KDV358F -11 10 IR - VR -12 10 -13 10 0 4 8 12 REVERSE VOLTAGE VR (V) 16 TOTAL CAPACITANCE CT (pF) 30 25 20 15 10 5 0 0.
1 C T - VR f=1MHz 1.
0 REVERSE VOLTAGE VR (V) 10 0.
4 0.
3 0.
2 0.
1 0 0.
1 r s - VR f=470MHz 1.
0 REVERSE VOLTAGE VR (V) 10 ∆(LOG CT) / ∆(LOG VR) ∆(LOG CT) / ∆(LOG VR) - VR 0 -0.
5 -1.
0 -1.
5 0.
1 1.
0 REVERSE VOLTAGE VR (V) 10 SERIES RESISTANCE rs (Ω) 2004.
8.
9 Revision No : 0 2/2 ...


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