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BUJ303CD

NXP
Part Number BUJ303CD
Manufacturer NXP
Description NPN power transistor
Published Mar 24, 2016
Detailed Description BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High volt...
Datasheet PDF File BUJ303CD PDF File

BUJ303CD
BUJ303CD


Overview
BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1.
Product profile 1.
1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.
1.
2 Features and benefits • Fast switching • Low thermal resistance • Surface mountable package • Tight DC gain spreads • Very high voltage capability • Very low switching and conduction losses 1.
3 Applications • DC-to-DC converters • High frequency electronic lighting ballasts • Inverters • Motor control systems 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IC collector current Fig.
1; Fig.
2; Fig.
4 Ptot total power dissipation Tmb ≤ 25 °C; Fig.
3 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 10 mA; VCE = 3 V; Tmb = 25 °C; Fig.
12 IC = 250 mA; VCE = 3 V; Tmb = 25 °C; Fig.
12 IC = 800 mA; VCE = 3 V; Tmb = 25 °C; Fig.
12 Min Typ Max Unit - - 5A - - 80 W - - 1050 V 28 34 47 35 43 57 31 37 48 Scan or click this QR code to view the latest information for this product NXP Semiconductors BUJ303CD NPN power transistor 2.
Pinning information Table 2.
Pinning information Pin Symbol Description Simplified outline 1 B base mb 2 C collector[1] 3 E emitter mb C mounting base; connected to collector 2 13 DPAK (SOT428) Graphic symbol C B E sym123 [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package.
3.
Ordering information Table 3.
Ordering information Type number Package Name BUJ303CD DPAK Description Version plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCEO collector-emitter voltage IB = 0 A IC collector current Fig.
1; Fig.
2; Fig.
4 ICM peak col...


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