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STGB15M65DF2

STMicroelectronics
Part Number STGB15M65DF2
Manufacturer STMicroelectronics
Description Trench gate field-stop IGBT
Published Mar 22, 2016
Detailed Description STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low loss Datasheet - production data TAB 3 1 D2PAK Fig...
Datasheet PDF File STGB15M65DF2 PDF File

STGB15M65DF2
STGB15M65DF2


Overview
STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low loss Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 15 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capab...



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