Power MOSFET - ON Semiconductor
Description
NTP75N03−06, NTB75N03−06
Power MOSFET 75 Amps, 30 Volts
N−Channel TO−220 and D2PAK
This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package.
This power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The Drain−to−Source Diode has a fast response with soft recovery.
Features
• Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatures • High Avalanche Energy Capability • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 • Pb−Free Packages are Available
Typical Applications
• Power Supplies • Inductive Loads • PWM Motor Controls • Replaces MTP1306 and MTB1306
N−Channel D
G
S
http://onsemi.
com
V(BR)DSS 30 V
RDS(on) TYP 5.
3 mW @ 10 V
ID MAX 75 A
4
4
1 2 3
TO−220AB CASE 221A
STYLE 5
2 1
3
D2PAK CASE 418AA
STYLE 2
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain
4 Drain
75N 03−06G AYWW
1 Gate
3 Source
2 Drain
75N 03−06G AYWW
1 Gate
2 Drain
3 Source
N75N03−06 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev.
6
Publication Order Number: NTP75N03−06/D
NTP75N03−06, NTB75N03−06
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage − Continuous
Non−repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TC = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
VDSS VDGB VGS VGS
ID ID IDM PD
30
Vdc
30
Vdc
±20
Vdc
±24
Vdc
75
Adc
59
225
Apk
125
W
1.
0...
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