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EMB09N03H

Part Number	EMB09N03H
Manufacturer	Excelliance MOS
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published	Mar 22, 2016
Detailed Description	N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9m...
Datasheet	EMB09N03H PDF File

Overview

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.
) 9mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL EMB09N03H LIMITS UNIT Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.
1mH, ID=37.
5A, RG=25Ω Repetitive Avalanche Energy2 L = 0.
05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg ±20 50 35 140 3...

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