DatasheetsPDF.com

STGWA30M65DF2

Part Number	STGWA30M65DF2
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Mar 22, 2016
Detailed Description	STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Fig...
Datasheet	STGWA30M65DF2 PDF File

Overview

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of minimum short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 50 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and ...

Similar Datasheet

STGWA30M65DF2 Trench gate field-stop IGBT - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)