Power MOSFET - International Rectifier
Description
SMPS MOSFET
IRF7478PbF-1
VDS RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.
5V)
Qg (typical) ID
(@TA = 25°C)
60 V
26 mΩ
30
21 nC
7.
0 A
Applications l High frequency DC-DC converters
Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
S1 S2
HEXFET® Power MOSFET
AA 8D
7D
S3 G4
6D 5D
Top View
SO-8
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number IRF7478PbF-1
Package Type SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7478PbF-1 IRF7478TRPbF-1
Absolute Maximum Ratings
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
7.
0 5.
6 56 2.
5 0.
02 ± 20 3.
7
-55 to + 150
300 (1.
6mm from case )
Units
A
W W/°C
V V/ns
°C
Thermal Resistance
Symbol
RθJL RθJA
Parameter Junction-to-Drain Lead Junction-to-Ambient
Typ.
––– –––
Max.
20 50
Units °C/W
Notes through are on page 8
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November 20, 2013
IRF7478PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
60 ––– ––– ––– 1.
0 ––– ––– ––– –––
––– ––– 0.
065 ––– 20 26 23 30 ––– 3.
0 ––– 20 ––– 100 ––– 100 ––– -100
V V/°C mΩ
V μA
nA
VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID ...
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