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S6304

Part Number	S6304
Manufacturer	Rohm
Description	SiC Schottky Barrier Diode Bare Die
Published	Mar 19, 2016
Detailed Description	S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced tempe...
Datasheet	S6304 PDF File

Overview

S6304 SiC Schottky Barrier Diode Bare Die VR 1200V IF 20A*1 QC 65nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lInner circuit (C) (A) Data Sheet (C) Cathode (A) Anode lConstruction Silicon carbide epitaxial planer type Schottky diode lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Junction temperature VRM 1200 VR 1200 IF 20*1 82*2 IFSM 310*3 62*4 IFRM 77*5 Tj 175 Range of storage temperature Tstg -55 to +175 *1 Limited by Tj *2 PW=8.
3ms sinusoidal, Tj=...

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