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BFP740FESD

Infineon
Part Number BFP740FESD
Manufacturer Infineon
Description NPN Transistor
Published Mar 18, 2016
Detailed Description BFP740FESD SiGe:C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipo...
Datasheet PDF File BFP740FESD PDF File

BFP740FESD
BFP740FESD

Overview
BFP740FESD SiGe:C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Feature list • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits • NFmin = 0.
6 dB at 2.
4 GHz and 0.
8 dB at 5.
5 GHz, 3 V, 6 mA • High gain Gms = 26 dB at 2.
4 GHz and Gma = 20.
5 dB at 5.
5 GHz, 3 V, 25 mA • OIP3 = 23.
5 dBm at 5.
5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications • Wireless communications: WLAN, WiMax, UW...


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