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BFP540ESD

Part Number	BFP540ESD
Manufacturer	Infineon
Description	Low Noise Silicon Bipolar RF Transistor
Published	Mar 18, 2016
Detailed Description	Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical ...
Datasheet	BFP540ESD PDF File

Overview

Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.
5 dB @ 1.
8 GHz Minimum noise figure NFmin = 0.
9 dB @ 1.
8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available BFP540ESD 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540ESD Marking Pin Configuration AUs 1=B 2=E 3=C 4=E - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-b...

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BFP540ESD Low Noise Silicon Bipolar RF Transistor - Infineon

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