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CTLDM303N-M832DS

Central Semiconductor
Part Number CTLDM303N-M832DS
Manufacturer Central Semiconductor
Description SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Published Mar 14, 2016
Detailed Description CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESC...
Datasheet PDF File CTLDM303N-M832DS PDF File

CTLDM303N-M832DS
CTLDM303N-M832DS


Overview
CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications.
This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.
TLM832DS CASE MARKING CODE: C330 APPLICATIONS: • DC-DC converters • Drive circuits • Power management FEATURES: • Low rDS(ON) (0.
078Ω MAX @ VGS=2.
5V) • High current (ID=3.
6A) • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State...



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