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BLL8H1214L-250

Part Number	BLL8H1214L-250
Manufacturer	NXP
Description	LDMOS L-band radar power transistor
Published	Mar 5, 2016
Detailed Description	BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev. 2 — 13 January 2015 Product data sheet 1. Pro...
Datasheet	BLL8H1214L-250 PDF File

Overview

BLL8H1214L-250; BLL8H1214LS-250 LDMOS L-band radar power transistor Rev.
2 — 13 January 2015 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.
2 GHz to 1.
4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 1.
2 to 1.
4 50 250 17 55 15 5 1.
2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency ...

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