DatasheetsPDF.com

BLL8H0514L-130

NXP
Part Number BLL8H0514L-130
Manufacturer NXP
Description LDMOS driver transistor
Published Mar 5, 2016
Detailed Description BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile...
Datasheet PDF File BLL8H0514L-130 PDF File

BLL8H0514L-130
BLL8H0514L-130

Overview
BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev.
2 — 9 February 2015 Product data sheet 1.
Product profile 1.
1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f tp  VDS PL Gp RLin D Pdroop(pulse) tr (MHz) (s) (%) (V) (W) (dB) (dB) (%) (dB) (ns) tf (ns) pulsed RF 960 to 1215 128 10 50 130 19 10 54 0 15 8 1200 to 1400 300 10 50 130 17 10 50 0 15 8 1.
2 Features and benefits  Easy power control  Integrated dual side ESD protection  High flexibility with respect to pulse f...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)