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C2612

Hitachi Semiconductor
Part Number C2612
Manufacturer Hitachi Semiconductor
Description 2SC2612
Published Mar 5, 2016
Detailed Description 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2...
Datasheet PDF File C2612 PDF File

C2612
C2612

Overview
2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg 1.
Base 2.
Collector (Flange) 3.
Emitter Ratings 500 400 7 3 6 1.
5 30 150 –55 to +150 Unit V V V A A A W °C °C 2SC2612 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) 400 VCEX(sus) 400...


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