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KMB010P30QA

KEC
Part Number KMB010P30QA
Manufacturer KEC
Description P-Channel Trench MOSFET
Published Mar 5, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KMB010P30QA PDF File

KMB010P30QA
KMB010P30QA

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for Battery pack.
FEATURES VDSS=-30V, ID=-10A.
Drain-Source ON Resistance.
RDS(ON)=20m (Max.
) @ VGS=-10V RDS(ON)=28m (Max.
) @ VGS=-4.
5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage Gate Source Voltage Drain Current VDSS -30 V VGSS 20 V DC ID* -10 A Pulsed IDP -80 A Drain Source Diode Forward Current IS -1.
7 A Drain Power Dissipation PD* 2.
0 W Maximum Junction T...


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