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KMB080N75PA

Part Number	KMB080N75PA
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Mar 5, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low voltage applications such as automotive, D...
Datasheet	KMB080N75PA PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=12m (Max.
) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulsed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* 25 Tj Tstg 75 25 80 320 80 300 -55 175 -55 175 V V A A A W Note1) Pulse Test : Pulse width 10 S Duty cycle 1%...

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KMB080N75PA N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

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