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CHA6005-99F

United Monolithic Semiconductors
Part Number CHA6005-99F
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic M...
Datasheet PDF File CHA6005-99F PDF File

CHA6005-99F
CHA6005-99F

Overview
CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6005-99F is a high power amplifier monolithic circuit, which integrates two stages and produces 32.
5dBm output power associated to a high power added efficiency of 38%.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features ■ High power : 32.
5dBm ■ High PAE : 38% ■ Frequency band : 8-12GHz ■ Linear gain : ...


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