Schottky Barrier Diode - Rohm
Description
Data Sheet
Schottky Barrier Diode
RB751VM-40
lApplications High speed switching
lDimensions (Unit : mm)
1.
25±0.
1
0.
1±0.
1 0.
05
lLand size figure (Unit : mm) 0.
9MIN.
1.
7±0.
1 2.
5±0.
2
0.
8MIN.
2.
1
lFeatures 1)Ultra small mold type.
(UMD2) 2)Low IR 3)High reliability
lConstruction Silicon epitaxial
0.
3±0.
05
ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A
dot (year week factory)
0.
7±0.
2 0.
1
UMD2 lStructure
lTaping specifications (Unit : mm)
4.
0±0.
1 2.
0±0.
05
φ 1.
55±0.
05
0.
3±0.
1
3.
5±0.
05 1.
75±0.
1 2.
75
8.
0±0.
2 2.
8±0.
1
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current
VRM VR Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
Storage temperature
Tstg
1.
40±0.
1
4.
0±0.
1
φ 1.
05
Limits 40 30 30 200 150
-40 to +150
Unit V V mA mA °C °C
1.
0±0.
1
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage Reverse current
VF IR -
- 0.
37 - 0.
5
Capacitance between terminals
Ct
-
2
-
Unit Conditions
V IF=1mA μA VR=30V pF VR=1V , f=1MHz
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, Ltd.
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1/3
2011.
06 - Rev.
A
RB751VM-40
Data Sheet
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
100 Ta=125℃
10 Ta=75℃
1
0.
1
Ta=-25℃ Ta=25℃
REVERSE CURRENT:IR(uA)
1000 100 10 1 0.
1 0.
01
0.
01 0 100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
320 310 Ta=25℃
IF=1mA n=30pcs 300
290
280 AVE:282.
4mV
270
260
250
REVERSE CURRENT:IR(nA)
0.
001 0
1000 900 800 700 600 500 400 300 200 100 0
VF DISPERSION MAP 20
30
REVERSE RECOVERY TIME:trr(ns)
Ifsm 1cyc
25
15
8.
3ms
20
10 15
5 AVE:3.
24A
0 IFSM DISPERSION MAP
10 5 0
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃
10 1
f=1MHz
10 20
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
30
Ta=25℃
VR=30V n=30pcs
AVE:245.
0nA
IR DISPERSION MAP
IF=0.
1A IR=0.
1A Irrr=0.
1*IR
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
0.
1 0
10 9 ...
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