Schottky Barrier Diodes - Fairchild Semiconductor
Description
RB751S40 — Schottky Barrier Diodes
September 2009
RB751S40 Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Flat Lead, Surface Mount Device Under 0.
70mm Height
• Extremely Small Outline Plastic Package SOD523F
Cathode
Anode
• Moisture Level Sensitivity 1 • Pb-free Version and RoHS Compliant
ELECTRICAL SYMBOL
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
SOD-523F Band Indicates Cathode RB751S40 Marking : 4B
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
40 V
IF(AV)
Average Rectified Forward Current
30 mA
IFSM
Non-Repetitive Peak Forward Current
500 mA
TJ Operating Junction Temperature Range
-55 to +125
°C
TSTG
Storage Temperature Range
-55 to +125
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD RθJA
Total Device Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB minimum land pad.
Value 200 500
Units mW °C/W
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVR Breakdown Voltage IR Reverse Leakage Current VF Forward Voltage
IR=10μA VR=30V IF=1mA
Min.
30
Typ.
Max.
0.
5 0.
37
Units V μA V
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RB751S40 — Schottky Barrier Diodes
Typical Performance Characteristics
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RB751S40 — Schottky Barrier Diodes
Typical Performance Characteristics (Continue)
© 2009 Fairchild Semiconductor Corporation RB751S40 Rev.
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RB751S40 — Schottky Barrier Diodes
Physical Dimension
SOD-523F
© 2009 Fairchild Semiconductor Corporation RB751S40 Rev.
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TRADEMARKS
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