SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE - SEMTECH
Description
RB751V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability
Applications • High speed switching
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
S8
Top View Marking Code: "S8" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.
) Junction Temperature Storage Temperature Range
Symbol
VRM VR IO IFSM Tj Ts
Value 40 30 30 200 125
- 40 to + 125
Unit V V mA mA OC OC
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 1 mA
Reverse Current at VR = 30 V
Capacitance Between Terminals at VR = 1 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol VF IR CT
Typ.
2
Max.
0.
37 0.
5
-
Unit V µA pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
RB751V-40
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A E bp
c
HE DA
UNIT A bp C D E HE
mm
1.
10 0.
80
0.
40 0.
25
0.
15 1.
80 0.
00 1.
60
1.
35 2.
80 1.
15 2.
30
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
...
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