MOSFET - Infineon
Description
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor IPA60R099C7
DataSheet
Rev.
2.
0 Final
PowerManagement&Multimarket
600VCoolMOS™C7PowerTransistor
IPA60R099C7
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe application •Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency •Enablinghighersystemefficiencybylowerswitchinglosses •Increasedpowerdensitysolutionsduetosmallerpackages •Suitableforapplicationssuchasserver,telecomandsolar •Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance SMPSe.
g.
Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
TO-220FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max
650 99
V mΩ
Qg.
typ
42
ID,pulse
83
ID,continuous @ Tj<150°C 36
Eoss@400V
4.
95
nC A A µJ
Body diode di/dt
360
A/µs
Type/OrderingCode IPA60R099C7
Package PG-TO 220 FullPAK
Marking 60C7099
RelatedLinks see Appendix A
Final Data Sheet
2 R...
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