NPN SILICON PLANAR EPITAXIAL TRANSISTOR - CDIL
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSD471A TO-92 BCE
ECB
Low Frequency Power Amplifier.
Complementary CSB564A
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C )
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
BVCBO
40
Collector Emitter Voltage
BVCEO
30
Emitter Base Voltage
BVEBO
5.
0
Collector Current
IC
1.
0
Collector Dissipation
PC
800
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector -Base Voltage
BVCBO IC=100uA, IE=0
40
Collector Emitter Voltage
BVCEO IC=10mA, IB=0
30
Emitter Base Voltage
BVEBO IE=100uA, IC=0
5.
0
Collector Cut off Current
ICBO
VCB=30V, IE=0
-
DC Current Gain
hFE VCE=1V, IC=100mA 70
Collector Emitter Saturation Voltage VCE(Sat) IC=1A, IB=0.
1A
-
Base Emitter Saturation Voltage
VBE(Sat) IC=1A, IB=0.
1A
-
Dynamic Characteristics
Transition Frequency
ft
VCE=6V, IC=10mA,
-
Output Capacitance
Cob VCB=6V, IE=0
-
f=1MHz
TYP -
130 16
MAX -
0.
1 400 0.
5 1.
2
-
hFE* Classification :
O : 70-140; Y : 120-240;
G : 200-400;
UNIT V V V A
mW deg C deg C
UNIT V V V uA
V V
MHz pF
Continental Device India Limited
Data Sheet
Page 1 of 3
TO-92 Plastic Package
B 321
KA E
D AA G
D SEC AA
21 3
FF
321
PIN CONFIGURATION 1.
BASE 2.
COLLECTOR 3.
EMITTER
H C All diminsions in mm.
DIM MIN.
MAX.
A 4.
32 5.
33
B 4.
45 5.
20
C 3.
18 4.
19
D 0.
41 0.
55
E 0.
35 0.
50
F 5 DEG
G 1.
14 1.
40
H 1.
14 1.
53
K 12.
70
—
TO-92 Transistors on Tape and Ammo Pack
M EC H AN IC AL D ATA
T hh
A
P A1
(p)
Ammo Pack Style Ad hesive Tape o n Top Side
FLAT SIDE LABEL
FEED
C arrier Strip
8.
2"
H1 H0
L
W2
Wo W1 W
t1 t
F1 F
P2
F2
Do
1.
77"
Po
All dimensions in mm unless specified otherwise
13"
Flat S ide of Transistor and Ad hesive Tape V isible 2000 pcs.
/A m m o P ack
ITEM
BODY WIDTH BODY HEIGHT BODY THI...
Similar Datasheet
