Glass Passivated Bridge Rectifier - Taiwan Semiconductor
Description
ABS4-K - ABS10-K
Taiwan Semiconductor
1A, 400V - 1000V Glass Passivated Bridge Rectifier
FEATURES
● Glass passivated junction ● Ideal for automated placement ● Reliable low cost construction utilizing molded plastic
technique ● High surge current capability ● UL Recognized File # E-326854 ● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS) ● Adapters ● Lighting application
MECHANICAL DATA
● Case: ABS ● Molding compound :meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound
(halogen-free) ● Moisture sensitivity level: level 1, per J-STD-020 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.
12 g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV) VRRM IFSM TJ MAX Package
1 400 - 1000
30 150
ABS
A V A °C
Configuration
Quad
ABS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ABS4-K ABS6-K ABS8-K ABS10-K UNIT
Marking code on the device
ABS4
ABS6
ABS8 ABS10
Repetitive peak reverse voltage Reverse voltage, total rms value
VRRM
400
600
800
1000
V
VR(RMS) 280 420 560 700 V
Maximum DC blocking voltage
VDC
400
600
800
1000
V
Forward current On glass-epoxy
Forward current On aluminum substrate Surge peak forward current, 8.
3 ms single half sine-wave superimposed on rated load I2t value (of a surge on-state current)
IF(AV)
IFSM I2t
0.
8 A
1.
0
30 3.
74
A A2s
Junction temperature Storage temperature
TJ TSTG
-55 to +150 -55 to +150
°C °C
1 Version:B1708
ABS4-K - ABS10-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL RӨJL RӨJA
LIMIT 25 80
UNIT °C/W °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
Forward voltage (1)
IF = 0.
4A, TJ = 25°C
V...
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