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KF3N60I

Part Number	KF3N60I
Manufacturer	KEC
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Mar 1, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe M...
Datasheet	KF3N60I PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 2.
3A Drain-Source ON Resistance : RDS(ON)=3.
3 Qg(typ) = 8.
5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_0.
10 G 0.
96 MAX H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
...

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