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GBJ1501

MDD
Part Number GBJ1501
Manufacturer MDD
Description SILICON BRIDGE RECTIFIERS
Published Feb 26, 2016
Detailed Description GBJ15005 THRU GBJ1510 SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 15.0 Amperes ? .1...
Datasheet PDF File GBJ1501 PDF File

GBJ1501
GBJ1501


Overview
GBJ15005 THRU GBJ1510 SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 15.
0 Amperes ? .
134(3.
4) ? .
122(3.
1) 1.
193(30.
3) 1.
169(29.
7) GBJ .
800(20.
3) MAX .
198 (5.
1) .
118(3.
0)*45° + .
106(2.
7) .
096(2.
3) .
094(2.
4) .
078(2.
0) .
043(1.
1) .
035(0.
9) ~~_ .
402(10.
2) .
386(9.
8) .
303(7.
7).
303(7.
7) .
287(7.
3).
287(7.
3) SPACING .
165(4.
2) .
142(3.
6) .
708(18.
0) .
669(17.
0) .
776(19.
7) .
441(11.
2) .
425(10.
8) ? .
134(3.
4) ? .
122(3.
1) .
189(4.
8) .
173(4.
4) .
150(3.
8) .
134(3.
4) .
114(2.
9) .
098(2.
5) .
031(0.
8) .
023(0.
6) FEATURES Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop,high current capability Reliable low cost construction utilizing molded plastic technique results in inexpensive product The plastic material has U/L flammability classification 94V-0 Dimensions in inches and (milimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number SYMBOLS Maximum repetitive peak reverse voltage VRRM Maximum RMS voltage VRMS Maximum DC blocking voltage Maximum Average Forward (with heatsink Note 2) Rectified Current @ T C =100℃ (without heatsink) Peak forward surge current VDC I(AV) 8.
3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM Maximum instantaneous forward voltage drop per birdge element at 7.
5A VF Maximum DC reverse current TJ =25 C at rated DC blocking voltage TJ =125 C It Rating for Fusing (t<8.
3ms) Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) Operating junction temperature range storage temperature range IR I2t CJ RθJC TJ TSTG GBJ 15005 50 35 50 GBJ 1501 100 70 100 NOTES: 1.
Measured at 1.
0MHz and applied reverse voltage of 4.
0V DC.
2.
Device mounted on 75mm*75mm*1.
6mm Cu plate heatsink.
3.
The typical data above is for reference only().
GBJ 1502 200 140 200 GBJ 1504 400 280 400...



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