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PTFC210202FC

Infineon
Part Number PTFC210202FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 25, 2016
Detailed Description PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integ...
Datasheet PDF File PTFC210202FC PDF File

PTFC210202FC
PTFC210202FC

Overview
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC210202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 7.
5 dB, 3.
84 MHz BW 24 60 20 Gain 16 12 Efficiency 40 20 0 8 PAR @ 0.
01% CCDF 4 -20 -40 0 28 ptfc210202fc_g1 -60 32 36 40 44 Av...


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