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PTFC270101M

Infineon
Part Number PTFC270101M
Manufacturer Infineon
Description High Power RF LDMOS Field Effect Transistor
Published Feb 25, 2016
Detailed Description PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an ...
Datasheet PDF File PTFC270101M PDF File

PTFC270101M
PTFC270101M

Overview
PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.
This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.
84 MHz bandwidth 23 70 22 Gain 21 60 50 20 40 19 30 18 20 Efficiency 17 10 16 c270101m-2.
1-gr1c 0 24 26 28 30 32 34 36 38 40 Output Power (dBm) Featu...


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