NPN SILICON TRANSISTOR - Unisonic Technologies
Description
UNISONIC TECHNOLOGIES CO.
, LTD
MJE13007-P
Preliminary
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
DESCRIPTION
The UTC MJE13007-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
It is particularly suited for 115 and 220 V switch mode applications.
FEATURES
* VCEO(SUS) 400V * 700V Blocking Capability
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13007L-P-TA3-T
MJE13007G-P-TA3-T
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package TO-220
Pin Assignment 123 BCE
MJE13007L-P-TA3-T
(1)Packing Type (2)Package Type (3)Lead Free
(1)T: Tube (2) TA3: TO-220 (3) L: Lead Free, G: Halogen Free
Packing Tube
www.
unisonic.
com.
tw Copyright © 2013 Unisonic Technologies Co.
, Ltd
1 of 4
QW-R203-047.
a
MJE13007-P
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Sustaining Voltage
VCEO
400 V
Collector-Emitter Breakdown Voltage
VCBO
700 V
Emitter-Base Voltage
VEBO
9.
0 V
Collector Current
Continuous Peak (1)
IC ICM
8.
0 A 16 A
Base Current
Continuous Peak (1)
IB IBM
4.
0 A 8.
0 A
Emitter Current
Continuous Peak (1)
IE IEM
12 A 24 A
Power Dissipation (TC = 25°C)
PD 80 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA 62.
5 °C/W
Junction to Case
θJC 1.
56 °C/W
Note: 1.
Pulse Test: Pulse Width = 5.
0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in
a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting
torque of 6 to 8•lbs.
ELEC...
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