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BC856AS

Unisonic Technologies
Part Number BC856AS
Manufacturer Unisonic Technologies
Description DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Published Feb 25, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR ...
Datasheet PDF File BC856AS PDF File

BC856AS
BC856AS

Overview
UNISONIC TECHNOLOGIES CO.
, LTD BC856AS Preliminary DUAL TRANSISTOR DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR  DESCRIPTION The UTC BC856AS is a dual PNP surface mount small signal transistor, it uses UTC’s advanced technology to provide customers with high DC current gain, etc.
The UTC BC856AS is suitable for switching and AF amplifier applications.
 FEATURES * High DC current gain  EQUIVALENT CIRCUIT  ORDERING INFORMATION Ordering Number Package BC856ASG-AL6-R SOT-363 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment 123456 Packing E1 B1 C2 E2 B2 C1 Tape Reel BC856ASG-AL6-R (1)Packing Type (2)Package Type (3)Green Package (1) R: Tape Reel (2) AL6: SOT-363 (3) G: Halogen Free and Lead Free  MARKING 6 54 9ASG 12 3 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R206-108.
b BC856AS Preliminary DUAL TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -80 -65 V V Emitter-Base Voltage Collector Current VEBO IC -5.
0 -100 V mA Peak Collector Current Peak Emitter Current ICM -200 mA IEM -200 mA Power Dissipation Operating Temperature Range PD 200 mW TJ -65~+150 °C Storage Temperature TSTG -65~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA PARAMETER SYMBOL Junction to Ambient θJA Note: Device mounted on FR-4 PCB minimum land pad.
RATINGS 625 UNIT °C/W  ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=10μA, IB=0 IC=10mA, IB=0 IE=1μA, IC=0 ON CHARACTERISTICS DC Current Gain ...


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