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BLM2010E

Part Number	BLM2010E
Manufacturer	BELLING
Description	N-Channel Enhancement Mode Power MOSFET
Published	Feb 25, 2016
Detailed Description	ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology ...
Datasheet	BLM2010E PDF File

Overview

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A Typ.
RDS(ON)= 16mΩ @ VGS=4.
5V Typ.
RDS(ON)= 20mΩ @ VGS=2.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking And Ordering Information Device Marking Device ...

Similar Datasheet

BLM2010E N-Channel Enhancement Mode Power MOSFET - BELLING

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