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BLM2006NE

Part Number	BLM2006NE
Manufacturer	BELLING
Description	N-Channel Enhancement Mode Power MOSFET
Published	Feb 25, 2016
Detailed Description	N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench techn...
Datasheet	BLM2006NE PDF File

Overview

N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM2006NE Description The BLM2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 21mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch Schematic diagram Marking and pin Assignment SOT23-6L top view Package Marking And Ordering Information Device Marking Device D...

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BLM2006NE N-Channel Enhancement Mode Power MOSFET - BELLING

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