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IPP60R160P6

Part Number	IPP60R160P6
Manufacturer	Infineon
Published	Feb 23, 2016
Description	MOSFET
Detailed Description	MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™
Datasheet	IPP60R160P6 PDF File

Overview

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™P6 600VCoolMOS™P6PowerTransistor IPx60R160P6 DataSheet Rev.
2.
2 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R160P6,IPB60R160P6,IPP60R160P6, IPA60R160P6 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.
CoolMOS™P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFET whilenotsacrificingeaseofuse.
Extremelylowswitchingandconduction lossesmakeswitchingapplicationsevenmoreefficient,morecompact, lighterandcooler.
TO-247 TO-220FP Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.
g.
PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
D²PAK tab 2 1 3 TO-220 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max 650 160 V mΩ Qg.
typ 44 nC ID,pulse 68 A Eoss@400V 5.
7 µJ Body diode di/dt 500 A/µs Type/OrderingCode IPW60R160P6 IPB60R160P6 IPP60R160P6 IPA60R160P6 Package PG-TO 247 PG-TO 263 PG-TO 220 PG-TO 220 FullPAK Marking 6R160P6 RelatedLinks see Appendix A Final Data Sheet 2 Rev.
2.
2,2015-07-10 600VCoolMOS™P6PowerTransistor IPW60R160P6,IPB60R160P6,IPP60R160P6, IPA60R160P6 TableofContents Description .
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