Part Number | GTVA261701FA |
Manufacturer | Infineon (https://www.infineon.com/) |
Title | Thermally-Enhanced High Power RF GaN HEMT |
Description | The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-... |
Features | input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input Matched • Typ... |
Published | Feb 23, 2016 |
Datasheet | GTVA261701FA PDF File |