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GTVA261701FA

Infineon
Part Number GTVA261701FA
Manufacturer Infineon (https://www.infineon.com/)
Title Thermally-Enhanced High Power RF GaN HEMT
Description The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-...
Features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input Matched • Typ...
Published Feb 23, 2016
Datasheet PDF File GTVA261701FA PDF File


GTVA261701FA
GTVA261701FA


Features
input matching, high efficiency, and a thermally-enhanced package with earless flange. Features
• Input Matched
• Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB
• GaN HE...



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