DatasheetsPDF.com

PTFB091507FH

Part Number	PTFB091507FH
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 21, 2016
Detailed Description	PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an ...
Datasheet	PTFB091507FH PDF File

Overview

PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.
2 A, ƒ = 960 MHz, 21.
0 20.
5 Gain 20.
0 19.
5 19.
0 18.
5 18.
0 41 Efficiency 43 45 47 49 51 Output Power (dBm) 70 60 50...

Similar Datasheet

PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)