DatasheetsPDF.com

PTFB090901EA

Infineon
Part Number PTFB090901EA
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Descr...
Datasheet PDF File PTFB090901EA PDF File

PTFB090901EA
PTFB090901EA

Overview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced packages.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP W...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)