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PTFA261702E

Infineon
Part Number PTFA261702E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 ...
Datasheet PDF File PTFA261702E PDF File

PTFA261702E
PTFA261702E

Overview
PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band.
Features include input and output matching, and thermally-enhanced package with slotted flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Efficiency (%) EVM (dBc) WiMAX Performance VDD = 28 V, IDQ = 1800 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.
5 MHz, sample rate = 4 MHz) 30 -15 Efficiency 25 EVM: ƒ = 2.
62 GHz 20 EVM: ƒ = 2.
68 GHz EVM: ƒ = 2.
...


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