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PTFA261301F

Infineon
Part Number PTFA261301F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E...
Datasheet PDF File PTFA261301F PDF File

PTFA261301F
PTFA261301F

Overview
PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.
62 – 2.
68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS ® FETs intended for ultra-linear applications.
They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA261301E Package H-30260-2 Adj.
Channel Power Ratio (dBc) Drain Efficiency (%) 3-Carrier CDMA2000 Performance at 28 Volts IDQ = 1.
4 A, ƒ = 2680 MHz -10 30 Efficiency -20 25 -30 20 -40 Alt2 15 Alt -50 10 -60 ACPR 5 -70 0 0 5 10 15 20 25 30 35 Output Power, avg.
...


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