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PTFA241301E

Infineon
Part Number PTFA241301E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E...
Datasheet PDF File PTFA241301E PDF File

PTFA241301E
PTFA241301E

Overview
PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.
They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA241301E Package H-30260-2 PTFA241301F Package H-31260-2 Drain Efficiency (%) Adj.
Ch.
Power Ratio (dBc) Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz 45 40 ACP Up -40 -45 35 ACP Low 30 -50 -55 25 -60 20 -65 Efficiency 15 ALT Up ...


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